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| MMBT4401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE SOT-23 COLLECTOR 3 0.055(1.40) MECHANICAL DATA * * * * * 2 EMITTER 0.006(0.15) 0.003(0.08) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted) O RATINGS Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o O SYMBOL PD TJ TSTG O VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 0.1uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 0.1uAdc, I C = 0) Base Cutoff Current (V CE = 35Vdc, V BE(off) = 0.4Vdc) Collector Cutoff Current (V CE = 35Vdc, V EB = 0.4Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 0.1 0.1 Vdc Vdc Vdc uAdc uAdc Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) (I C = 1.0mAdc, V CE = 1.0Vdc) (I C = 10mAdc, V CE = 1.0Vdc) (I C = 150mAdc, V CE = 1.0Vdc) (I C = 500mAdc, V CE = 2.0Vdc) Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) VCE(sat) hFE 20 40 80 100 40 0.75 300 0.4 0.75 0.95 1.2 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) fT Ccb Ceb hie hre hfe hoe 250 1.0 0.1 40 1.0 6.5 30 15 8.0 500 30 MHz pF pF kohms X 10 -4 umhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc) td tr ts tf 15 20 225 30 ns ns (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) < Note : Pulse Test: Pulse Width-300ms,Duty Cycle<2.0% - RATING AND CHARACTERISTICS CURVES ( MMBT4401 ) 25 C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 3.0 2.0 0.1 Ccb 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500 REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) O 100OC VCC = 30V IC/IB = 10 QT QA Figure 1. Capacitances 100 70 50 t, TIME (ns) 30 20 t, TIME (ns) tr@ VCC= 30V tr@ VCC= 10V td@ VEB= 2.0V td@ VEB= 0V IC/IB=10 100 70 50 30 20 tf Figure 2. Charge Data tr VCC= 30V IC/IB=10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 3. Turn-On Time ts'=ts -1/8tf IB1=IB2 IC/IB= 10 to 20 100 70 50 Figure 4. Rise and Fall Times IC, COLLECTOR CURRENT (mA) 300 200 ts', STORAGE TIME (ns) tf, FALL TIME (ns) IC/IB= 20 VCC= 30V IB1=IB2 30 20 IC/IB=10 100 70 50 30 10 7.0 10 20 30 50 70 100 200 300 500 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time RATING AND CHARACTERISTICS CURVES ( MMBT4401 ) 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 10 IC=1.0mA, RS = 150 W IC=500uA, RS = 200 W IC=100uA, RS = 2.0 kW IC=50uA, RS = 4.0kW f = 1.0 kHz NF, NOISE FIGURE (dB) RS = OPTIMUM SOURCE RS = RESISTANCE 8.0 6.0 4.0 2.0 0 50 IC=50uA IC=100uA IC=500uA IC=1.0mA NF, NOISE FIGURE (dB) 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f, FREQUENCY (KHz) Figure 7.Frequency Effects 300 hje, INPUT IMPEDANCE (OHMS) 200 hfe, CURRENT GAIN 400 300 200 Figure 8.Source Resistance Effects MMBT4401 UNIT 1 MMBT4401 UNIT 2 RS, SOURCE RESISTANCE (OHMS) 100 70 50 30 20 0.1 MMBT4401 UNIT 1 MMBT4401 UNIT 2 100 80 60 40 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 9.Cuttent Gain Figure 10.Input Impedance 100 50 COEFFICIENT (mV/ oC) 20 10 5.0 2.0 1.0 0.1 MMBT4401 UNIT 1 MMBT4401 UNIT 2 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 V, VOLTAGE (V) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4401 UNIT 1 MMBT4401 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11.Voltage Feedback Ratio Figure 12.Temperature Coefficients RATING AND CHARACTERISTICS CURVES ( MMBT4401 ) 3.0 hFE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0V VCE = 10V TJ = 125 C O 1.0 0.7 0.5 0.3 0.2 0.1 25 C O -55 C O 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 Figure 13. DC Current Gain 1.0 VCE, COLLECTOR - EMITTER VOLTAGE (V) 0.8 0.6 0.4 0.2 0 0.01 TJ = 25 C O IC, COLLECTOR CURRENT (mA) IC = 1.0mA 10 mA 100 mA 500 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 14. Collector Saturation Region 1.0 0.8 0.6 0.4 0.2 0 0.1 TJ = 25 C O + 0.5 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) O 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 QVC for VCE(sat) VOLTAGE (V) VBE @ VCE= 10V VCE(sat) @ IC/IB = 10 QVB for VBE 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages Figure 16. Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. |
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